Method and structure for implementing dynamic chip burn-in.

摘要

A method and structure for implementing dynamic burn-in of semi-conductor chips in TAB processing is provided. The semi-conductor chips (18) are mounted on a wire pattern (12) formed on the obverse side of an insulating tape (10) in a conventional way. The insulating tape has a plurality of openings (22) extending therethrough, one opening between each adjacent location of a chip. Wires (12) from the wiring pattern ateach chip location pass over the openings on the obverse side of the tape. A second insulating tape is provided which has a series of parallel conductors (24) formed on one surface thereof. The spacing of the conductors corresponds to the spacing of the wires over the over the openings. The second tape is applied to the reverse surface of the first tape with the conductors on the second tape in registration with the wires over the openings in the first tape and the wires are electrically bonded to the conductors. Thus, various voltage and signal levels can be supplied for all of the chips simultaneously during dynamic burn-in.