发明名称 CO GAS SENSOR
摘要 The SnO2-Ag thin film element in which the Ag is contained at 0.2-5 % is formed by the vacuum-deposition method. The element is heat- treated at 200-800 degree C for 5-120 min.. The electrode layer Au is vacuum-deposited on the heat-treated element. The electrode layer is etched with l mm gap after the photo-resistor. Then the lead wire is soldered on the electrode and unnecessary Ag layer is etched by the photo lithography.
申请公布号 KR900004690(B1) 申请公布日期 1990.07.02
申请号 KR19860010008 申请日期 1986.11.26
申请人 SAM SUNG ELECTRONIC CO., LTD. 发明人 LIM HONG-GI
分类号 G01N27/12;(IPC1-7):G01N27/12 主分类号 G01N27/12
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