发明名称 |
CO GAS SENSOR |
摘要 |
The SnO2-Ag thin film element in which the Ag is contained at 0.2-5 % is formed by the vacuum-deposition method. The element is heat- treated at 200-800 degree C for 5-120 min.. The electrode layer Au is vacuum-deposited on the heat-treated element. The electrode layer is etched with l mm gap after the photo-resistor. Then the lead wire is soldered on the electrode and unnecessary Ag layer is etched by the photo lithography.
|
申请公布号 |
KR900004690(B1) |
申请公布日期 |
1990.07.02 |
申请号 |
KR19860010008 |
申请日期 |
1986.11.26 |
申请人 |
SAM SUNG ELECTRONIC CO., LTD. |
发明人 |
LIM HONG-GI |
分类号 |
G01N27/12;(IPC1-7):G01N27/12 |
主分类号 |
G01N27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|