| 摘要 |
PURPOSE:To decrease the light energy required for switching by irradiating a pnpn structural body with light while the voltage higher than a switching voltage is held applied thereto in a high impedance state, thereby switching the high impedance state to a low impedance state. CONSTITUTION:The pnpn structural body laminated with a 1st n type semiconductor layer, 2nd p type semiconductor layer, 3rd n type semiconductor layer, and 4th p type semiconductor layer shifts to the two states; the high impedance state and the low impedance state with the switching voltage as a boundary. The voltage above the switching voltage Vs is held impressed to the pnpn structural body in the high impedance state and this structural body is irradiated with the light by which the high impedance state is switched to the low impedance state. Electrons and holes can then be electronically implanted to some extent into the pnpn element during the writing time of the light in spite of the high impedance state. The required light energy is decreased in this way as compared to the case of generating switching purely by the light alone.
|
