| 摘要 |
An insulated-gate field-effect semiconductor device comprising a silicon substrate of a first conductivity type, heavily doped source and drain regions of a second conductivity type in the substrate, a plurality of island regions of the second conductivity type in the substrate, the heavily doped island regions being located between the source and drain regions, a gate oxide layer on the surface of the substrate, and a conductive layer having a portion on the gate oxide layer, the portion of the conductive layer being coextensive with the area of the substrate which intervenes between the source and regions. The conductive layer may have apertures respectively aligned with the island regions in the substrate and the conductive layer may be formed to be extensive throughout the area of the substrate which intervenes between the first and second heavily doped regions.
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