发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To carry out the cooling of a thin film in good efficiency without generating the deterioration of the formed thin film, by introducing a hydrogen gas into a container after a thin film is grown on a substrate to carry out the cooling of the thin film. CONSTITUTION:In forming a thin film of amorphous silicon, silicon is heated and evaporated while a base plate 4 is heated and deposited on the base plate 4 while activated or ionized hydrogen is taken in from an introducing pipe 9 to grow the film and, succeedingly, a hydrogen gas is introduced from the introducing pipe 9 to rapidly cool the film within a short time. By this method, the formed film can be cooled in good efficiency without deteriorating the same.
申请公布号 JPS5888030(A) 申请公布日期 1983.05.26
申请号 JP19810184664 申请日期 1981.11.18
申请人 KONISHIROKU SHASHIN KOGYO KK 发明人 SHINDOU MASANARI;OOTA TATSUO;SATOU SHIGERU;MIYOUKAN ISAO;SHIMA TETSUO
分类号 C23C14/58;B01J19/00;C23C14/00;H01L21/203 主分类号 C23C14/58
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