| 摘要 |
PURPOSE:To obtain a high-speed electric field transistor having large driving capacity by forming an electron layer unidimensionally in high density. CONSTITUTION:A first AlGaAs layer 16 having forbidden band width broader than a GaAs layer 10 is formed on a (001) face 11, which makes heterojunction with the GaAs layer 10, and an electron gas layer 20 is created within the GaAs layer 10. Also, a second AlGaAs layer 17 having the forbidden band width futher broader than the first AlGaAs layer 16 is formed on the (111)B face 12. The area near the (001) face 11 of the GaAs layer 10 is caught by p type AlGaAs layers 17 having broader forbidden band widths from both sides, therefore a vacant layer 17 is formed along the p type AlGaAs layer 17 within the GaAs layer 10. The electron layer 20 caught by the vacant layers becomes extremely thin line shape, that is, unidimensional electron layer. The currents that flow to the one-dimensional electron layer 20 like this can be controlled by applying voltage onto the second AlGaAs layer 17. |
