| 摘要 |
PURPOSE:To increase a removal rate by correspondingly increasing the gas in a processing chamber under processing if a certain processing chamber is at a halt at the time of housing semiconductor substrates provided with resist films on the respective surfaces into the plural processing chambers and irradiating the substrates with UV rays to remove the resist films while passing gaseous ozone. CONSTITUTION:The gaseous ozone from a gaseous ozone generator 3 is diverted to the plural processing chambers 1 and 2 and the surfaces of the semiconductor wafers housed therein are irradiated with the UV rays to remove the resist films deposited on the wafers. The processing timing is shifted in the processing chambers 1 and 2 at this time; for example, the gaseous ozone passed to the chamber 1 thus far is added into the chamber 2 to speed up the processing if the processing in the chamber 1 ends earlier. The effective utilization of the gas in the parallel resist removing process is enabled in this way. |
