| 摘要 |
PURPOSE:To realize high-speed operation and low power consumption and to improve operation stability, by using a differential circuit in a latch circuit, and relaxing control over the thickness of an FET active layer. CONSTITUTION:Between a grounding terminal and the cmmon-connected source terminal 3 of input-stage field effect transistors (FET) 1 and 2 of a current switching type logical circuit, a normally-on type single-gate FET5 or dual-gate FET6 is interposed and their gate terminals are connected to the grounding terminal. Characteristic curves (b) and (c) show the voltage-current relations of the single-gate FET5 and dual-gate FET6. The use of the normally-on type FET as a current source improves current stability as compared with a resistance and provides high-speed logical operation with a large noise margin. Further, the use of the normally on-type dual-gate FET6 as the current source provides saturation characteristics superior to those of the single-gate FET5, so higher performance is obtained. |
