| 摘要 |
<p>PURPOSE:To realize a FET large in an ON-OFF ratio of a current by a method wherein a source region, a gate region, and a channel region are all formed of the same conductivity type conductor. CONSTITUTION:An n-type Si thin film 2, a Si thin film 3 slightly doped with a donor impurity, a SiO2 thin film 4 constituting a gate oxide film, and a gate electrode 5 are formed on a glass substrate 1. And, power feeders 7 and 8 are provided to the n-type Si thin film 2 to constitute an n-MOS-like structure. As this element is formed of a source region, a gate region, and a channel region all of the same conductivity type, the element can be made high in an ON-OFF ratio of a current through a high frequency region.</p> |
