| 摘要 |
PURPOSE:To prevent problems due to particles in subsequent processes by a method wherein a chamber side wall of a vacuum chamber is heated when an undeveloped part is etched after a photo resist applied on a material to be etched is exposed and developed on a desired mask pattern. CONSTITUTION:A photo resist 8 is applied on a silicone substrate 7, and is exposed and developed on a desired mask 9. In this process, the whole resist is etched by using O2 plasma 11 to remove unexposed part 10 which has been generated. In this case, a chamber side wall of a vacuum chamber is heated to preferably 60 deg.C or higher. This can prevent particles from growing on a material to be etched. |
