SEMICONDUCTOR DEVICE MANUFACTURE

摘要

In the manufacture of infrared-sensing arrays of cadmium mercury telluride a semiconductor body structure (12) is formed on a substrate (20) by bonding a body (10) to the substrate (20) via an adhesive layer (4) and removing at least one portion (11) of the body throughout its thickness. The electrode leads (13) and active regions (14) of the device are formed at the first body surface (1) which is subsequently bonded to the substrate (20), after which parts of the leads (13) are exposed by the removal of the body portion (11), for contacting with a subsequently deposited conductor pattern which may form substrate conductors or interconnecting links to substrate conductors (23). The regions (14) at the first surface (1) are protected against material degradation which can occur at the opposite surface (2) during prolonged or high temperature heat treatments and since the leads (13) are always supported on either the body (10) or the substrate (20) the semiconductor material at the active device surface (1) is not strained.