Transistor structure.

摘要

A bipolar transistor has a base region including a heterostructure and a doped layer (18) of semiconductor material with the heterostructure functioning as a two-dimensional hole gap. The doped layer (18) is sufficiently thin to prevent occurrrence of a charge-neutral region of holes. In operation the transistor can switch quickly since minority charge storage in the base region does not present a problem. The structure lends itself to down-scaling in size in a VLSI circuit.