| 摘要 |
<p>PURPOSE:To recognize the precipitation nucleus defect state of a silicon crystal contg. a specific quantity of a impurity oxygen by subjecting said silicon crystal to measurement and analysis of the IR absorption spectra specified in low temp. and wave number range. CONSTITUTION:The silicon crystal contg. >=1ppm oxygen as an impurity is subjected to the measurement of the far IR absorption spectra at the low temp. of <=40K in the 10-60cm<-1> wave number range. Assuming that the concn. of the impurity oxygen is measured by 1,106cm<-1> IR spectrum, a difference arises in the actual concn. in some cases with respect to the concn. of the impurity oxygen which is regarded to be the same in the spectrum. The precipitation state of the precipitation nucleus defect of the silicon crystal which is different in heat history time is, therefore, recognized by analyzing the wave number position, height, half-amplitude level and area degree, etc. of the absorption peak of the 29.3cm<-1> IR absorption spectrum with respect to the 1,106cm<-1> IR absorption spectrum.</p> |
