| 摘要 |
PURPOSE:To improve the integration of a circuit when an embedded wiring layer is used, by connecting a conductor region embedded in a groove to the second semiconductor region of a substrate surface. CONSTITUTION:The first semiconductor region 21 isolates conductor regions 22 embedded in grooves from a semiconductor substrate 20 by reverse directional characteristics of diodes and the second semiconductor region forms source and drain regions 23f and 23d of a MOSFET. The third semiconductor region 24 has an effect connecting electrically the first semiconductor region 21 to the second semicondoctor region and as a result, it connects electrically a source region 23f or a drain region 23d of the MOSFET to an embedded conductor region 23. In this way, the integration of a circuit in the case where an embedded wiring layer is used can be improved. |
