| 摘要 |
PURPOSE:To reduce the time necessary for exposing a resist film with electron beams by laminating a positive type electron beam resist film and ammonium polystyrene sulfonate on a semiconductor substrate in this order, and exposing the laminate with the electron beams, followed by developing the exposed laminate with a developing agent for an aqueous or a novolak type photoresist. CONSTITUTION:A polymethyl methacrylate (PMMA) film 8 and an ammonium polystyrene sulfonate (AmSS) film 9 are laminated on the semiconductor substrate in this order. Next, the laminate is exposed with the electron beams 3 having a prescribed shape, and then developed with the developer for the aqueous or the novolak type photoresist to form a pattern composed of the AmSS film 9. And then, the pattern is exposed wholly with far UV rays 10, followed by developing the exposed pattern with the developer for a positive type electron beam resist to form the pattern composed of the PMMA film 8. Thus, the approach effect correction of the pattern due to the GHOST method is realized by exposing it with the electron beam at a time, without using a metal film. |
