| 摘要 |
PURPOSE:To remarkably improve the adhesiveness of a diamond film to a substrate and to obtain the title substrate which is excellent in exfoliating strength and heat conductivity by forming a layer of the main component of which is amorphous carbon between the substrate and the diamond film. CONSTITUTION:For instance, the substrate 1 consisting of silicone single crystal, metal such as W, Mo, ceramics such as Si3N4, SiC, an ultrahard material such as WC, etc., is set at a specified position in a reactor tube 51 consisting of quartz tubes crossing at right angles, and a raw gas (for instance, mixed gas of H2/CH4 with 100/3 volume ratio) is supplied from a raw gas supply pipe 52, and plasma is generated by introducing microwave of 700W from a microwave guiding pipe 53 through a matching unit 54, an isolator 55 and an electric power source 56, etc., and the layer 2 of 1-6mu thickness consisting of main component of amorphous carbon is formed on the substrate 1 by heating it at 800 deg.C for about one hour under the pressure of 50Torr in the reactor tube. Then the raw gas of different condition of concn. (for instance, mixed gas of H2/CH4 with 100/1 volume ratio) is introduced on the layer 2, and the diamond film 3 of 5-50mu thickness is formed by operating for about 8 hours in the same way as mentioned above. |
