发明名称 FORMATION OF PATTERN OF PHOTORESIST
摘要 PURPOSE:To enhance sensitivity of a photoresist by a method wherein a semiconductor substrate coated with the photoresist is left in an atmosphere whose relative humidity has been specified during a period from an exposure operation to a developing operation. CONSTITUTION:A semiconductor substrate which has been transferred by using a transfer system 10 is transported to a photoresist-coating apparatus 1; a photoresist is coated. Then, the substrate is transported to a baking apparatus 2; the photoresist coated on the semiconductor substrate is dried. Then, the substrate is transported to an exposure apparatus 3, and an exposure operation is executed. After the exposure operation, the substrate is transported to a steam-generating and baking apparatus 4; a baking operation is executed in an atmosphere whose relative humidity is nearly 90% or higher. After that, the substrate is transported to a developing apparatus 5; a developing operation is executed. As a result, without lowering sensitivity of the photoresist, its sensitivity can be rather enhanced; it is possible to reduce a variation in a line width during a period when the substrate is left from the exposure operation to the developing operation.
申请公布号 JPH01157527(A) 申请公布日期 1989.06.20
申请号 JP19870315813 申请日期 1987.12.14
申请人 TOSHIBA CORP 发明人 ITO YASUSHI;URAYAMA KAZUHIKO
分类号 G03F7/38;G03F7/00;G03F7/26;H01L21/027 主分类号 G03F7/38
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