| 摘要 |
PURPOSE:To produce the photomask with high accuracy by applying a resist to a metallic plate, executing pre-baking, radiating an electron beam or ultraviolet rays, thereafter, bringing a chrome film to vapor-deposition and executing the development and etching. CONSTITUTION:A chrome film 2 is formed on a quartz substrate 1, an EB negative resist 3 is applied on a metallic plate, pre-baking is executed, and thereafter, an electron beam 4 or ultraviolet rays is radiated on a prescribed area. Thereafter, when a chrome film 5 is brought to vapor-deposition on the whole surface of the plate by a spattering device, and a dip development is executed, the resist 3 of an unexposed part is melted. In this case, the chrome 5 which is brought to vapor-deposition onto the resist 3 of the unexposed part is also eliminated together with the resist 3. Subsequently, when etching is executed by a dry etching device, the chrome film 2 of the part where the resist 3 is melted and the chrome film 5 which is brought to vapor-deposition onto the resist 3 of the part which is irradiated by the electron beam 4 are brought to etching, and in the end, by peeling off the resist 3, a desired mask pattern is obtained. In such a way, the photomask can be manufactured with high accuracy. |
