| 摘要 |
<p>The invention relates to a method for fabricating a resistor for use as bias resistor of a light-emitting diode (LED), both being accommodated in a common housing and connected in series. The invention consists in the semiconductor wafer used for fabricating the resistor having a defined thickness and a defined first and second doping, the first doping establishing the conductivity type and the second doping very largely compensating for the temperature coefficient of the resistance of the semiconductor wafer, and in the resistor being fabricated by dividing this wafer into resistor elements, the magnitude of the resistance being selected in such a way, by appropriate choice of the base area of the resistor element, that subsequent trimming of the resistor can be dispensed with.</p> |
