| 摘要 |
PURPOSE:To obtain a semiconductor device in which a resistance value of a high- resistance region of a polycrystalline silicon layer can be set at a higher value than prior arts with respect to the same cell area, by forming an interlayer insulating oxide film such that it has projections on the surface section corresponding to the high-resistance region and forming the highresistance region along the uneven surface including the projections so as to increase the resistance value. CONSTITUTION:A transistor region is formed on a semiconductor substrate 11, an interlayer insulating oxide film 16 is formed on the transistor region and a polycrystalline silicon layer 17 having a high-resistance region 21 and a middle resistance region 20 to be used as interconnection is formed on the interlayer insulating oxide film 16. In a semiconductor device thus constructed, said interlayer insulating oxide film 16 is provided with projections to define uneven surface section corresponding to the high-resistance region 21, and the highresistance region 21 is formed along this uneven surface to increase the resistance value. For example, the interlayer insulating oxide film 16 has a plurality of projections 22 on the surface section corresponding to the high resistance region 21, and the high-resistance region 21 is formed, between the adjacent middle-resistance regions 20 and 20, along the surface of the interlayer insulating oxide film 16 including the surfaces of the projections. |
