| 摘要 |
PURPOSE:To obtain a mask for X-ray exposure having high accuracy easily by implanting ions into the surface of a base material to form an X-ray mask substrate and selectively implanting silicon ions into a metallic layer laminated on the substrate. CONSTITUTION:A substrate is used as an X-ray mask substrate 21 capable of selectively etching a base material 20 having excellent transmission to X-rays by implanting ions from the surface of the base material 20, and a metallic layer 22 having the high absorption coefficient of X-rays is laminated onto the X-ray mask substrate 21. Silicon ions are implanted selectively into the metallic layer 22 to shape a metallic silicide region, and the X-ray absorption pattern body 24 of a metallic silicide is formed by etching the metallic layer except the metallic silicide region. The X-ray mask substrate is exposed through selective etching removal, employing an etching-resistant layer 23 having a specified pattern shaped onto the rear of the base material 20 as a mask, thus forming a supporter 25. Accordingly, a mask for X-ray exposure having high accuracy can be manufactured easily. |
