发明名称 |
High voltage capacitor for integrated circuits |
摘要 |
High voltage capacitors particularly suited for a BiCMOS process are formed in conjunction with prior art low voltage capacitors. In a first embodiment of a high voltage capacitor, an N+ region (66) is used as a first plate of the capacitor. The thermal gate oxice layer (48) used in conjunction with the MOS transistors (22,24) is also grown over the N+ region (66). Since the thermal oxide growth over the N+ region is accelerated, a thicker oxide region will be formed. A polysilicon plate (70) is formed over the thick oxide region (68) at the same time the first plate (12) of the low voltage capacitor (10) is formed. Alternatively, a nitride layer (18) may be formed over the thick oxide layer (68). The nitride layer (18) is also used in the formation of a low voltage capacitor (10).
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申请公布号 |
US4805071(A) |
申请公布日期 |
1989.02.14 |
申请号 |
US19870126442 |
申请日期 |
1987.11.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HUTTER, LOUIS N.;ERDELJAC, JOHN P. |
分类号 |
H01L27/04;H01L21/02;H01L21/334;H01L21/822;H01L21/8249;H01L27/06;H01L27/08;H01L29/94;(IPC1-7):H01G4/10;H01G7/00;H01L27/02 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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