发明名称 METHOD FOR FORMING POSITIVE TYPE RESIST PATTERN
摘要 PURPOSE:To reduce swelling and flow of a pattern at the time of developing it,and to form a fine pattern with high accuracy by dehydrating previously a resist material or a resist solution which dissolves the resist material in a solvent, thereby reducing water content of said resist solution which is applied to an article to be worked. CONSTITUTION:A prescribed resist pattern is formed by coating the article to be worked wit the resist solution, followed by prebaking it, and the obtd. prescribed pattern is irradiated by a high energy ray, followed by developing said pattern to form the prescribed resist pattern on the particle to be worked. In this case, the resist solution is prepd. by dehydrating the water content of a positive type resist material to <=0.4wt.%, and then, by dissolving said material in the solvent. Namely, the swelling and the flow of the pattern does not generate, and the pattern having the high resolution is formed by reducing the water content of the resist solution to a prescribed value, thereby forming the pattern on the article to be worked.
申请公布号 JPS6410239(A) 申请公布日期 1989.01.13
申请号 JP19870166389 申请日期 1987.07.03
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 MIYOSHI KAZUNARI;HARADA KATSUYUKI
分类号 G03F7/26;G03F7/039 主分类号 G03F7/26
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