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发明名称
COMPONENTE A SEMICONDUTTORI
摘要
In a semiconductor component, in particular, a high-voltage transistor, with an oxygen doped or nitrogen doped silicon layer on the surface, a glass layer is provided between the doped silicon layer and the semi-conductor surface.
申请公布号
IT1198145(B)
申请公布日期
1988.12.21
申请号
IT19860022418
申请日期
1986.11.21
申请人
TELEFUNKEN ELECTRONICH GMBH
发明人
分类号
H01L23/532;(IPC1-7):H01L/
主分类号
H01L23/532
代理机构
代理人
主权项
地址
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