| 摘要 |
860,453. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Sept. 16, 1959 [Sept. 26, 1958], No. 31604/59. Class 37. The p-n junction of a rectifier is protected from moisture by an insulating lacquer-containing, finely divided fibrous or flaky insulating material. In the device shown, the junction formed by alloying a gold antimony electrode 4 to a p-type silicon body 2 is mounted on a molybdenum plate 1 by an aluminium layer 3 and is protected by a lacquer 5 containing flaky mica. Fibrous asbestos may be used instead of mica. A high vacuum or silicone grease may provide additional protection. |
