| 摘要 |
PURPOSE:To enable axis alignment of wafer with cleavage planes of crystal without dividing a round-shaped wafer by a method wherein a pattern for cleavage plane alignment is directly formed utilizing the orientation flat surface and an alignment with a photomask is performed with this pattern as a guide. CONSTITUTION:A pattern for cleavage plane matching is formed directly within the surface of a wafer utilizing the surfaces of orientation flats on the peripheral parts of the compound semiconductor wafer and an alignment with a photomask is performed with this pattern as a guide. For example, in a round-shaped wafer having orientation flats (a) and (b) with a rough cleavage plane, a laser beam condensed from the directions vertical to the cleavage planes within the surface of the wafer is irradiated on the wafer, the reflected light is detected, the reflected light is aligned in such a way as to come in the same direction as that of the incident light and the wafer is fixed. In that state, the laser beam is condensed to an arbitrary position within the surface of the wafer utilizing a solid laser to perform a masking processing. Thereby, a mask subjected to axis alignment with the cleavage plane of crystal can be formed on the wafer without dividing the round-shaped wafer. |
