| 摘要 |
PURPOSE:To prevent an electrode part from being deteriorated due to heat treatment upon the forming of the superconductive material, by using a high- melting-point metal to form an electrode part of a semiconductor element in a semiconductor device in which a superconductive material is used as a wiring material. CONSTITUTION:After source.drain regions 7 and a gate electrode 5 made of WSi of high-melting-point metal silicide are formed on a substrate 1, an ohmic electrode 9 made of GeMoW of high-melting-point metal is formed on a prescribed region. Next, after a sputtering method is used to heap a superconductive forming material on the whole surface of the substrate, this material is etched to form a first layered wiring 10. Further, after an SiN film 11 is formed on the whole surface, the same superconductive forming material as said one is used to form a second layered wiring 13. Next, the substrate is annealed at 800 deg.C or more so that the first and second layered wirings 10 and 13 are converted into superconductive materials. Since the gate electrode 3 and the ohmic electrode 9 of the semiconductor element are formed of heat- resisting materials, their electrodes are prevented from being deteriorated when this heat treatment is performed.
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