| 摘要 |
PURPOSE:To prevent the generation of a junction leak and a junction breakdown by a method wherein, after the surface region of a contact hole has been brought into an amorphous state using an ion-implanting method, an electrode is formed in the contact hole by performing a selective CVD method. CONSTITUTION:A contact hole 4 is formed on the insulating film 3 on a semiconductor substrate 1 having a shallow junction, the surface of said contact hole 4 is brought into an amorphous state, and a metal 5 is selectively grown in the contact hole 4 by reacting the gas containing metal. As a result, a metal can be selectively grown in the contact hole having a shallow junction using a simple method without generating junction leak and junction breakdown.
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