MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a semiconductor device for the purpose of composing a liquid crystal image displaying device so that a second conductor layer and facing electrodes are prevented from being shorted and corroded, by using a similar photo-lithographic process to form photosensitive organic resin on the second conductor layer. CONSTITUTION:A first conductor layer 12 is selectively formed on a main surface of a substrate 11, and an insulation thin film layer 13 is interposed therebetween to superpose a semiconductor layer 14 partially on the first conductor layer 12. Further, a second conductor layer 31 is connected directly with the semiconductor layer 14 or connected electrically with it by interposing a third conductor layer 17 therebetween to have a partially superposed part. Next a photosensitive organic resin 41 is formed on the second conductor layer 31. Formation of patterns on the photosensitive organic resin 41 and the second conductor layer 31 is performed by using a similar photo-lithographic process. For example, a gate electrode 12, a silicon nitride insulating film 13, and an amorphous Si semiconductor layer 14 are formed on a glass substrate 11, then the whole surface of the substrate is coated with Al 31. Further a photoresist 41 is formed thereon and the photo-lithographic process is used to form source and drain electrodes 15a, 15b.