| 摘要 |
PURPOSE:To assure the rapid response characteristics by a method wherein the weak coupling characteristics of element are controlled by irradiating a semiconductor with laser beams. CONSTITUTION:A part between two surfaced Schottky barriers (c) formed in the interface between a semiconductor (a) and superconductors (b) is subjected to the weak metallic characteristics due to the degeneration state of semiconductor. When the part is excited with circular polarization laser beams 27 displaying energy higher than the band gap energy Eg between a conductive band GAMMA6 of GaAs and dually degenerated a low electron band GAMMA8, the circular polarization induces the spin quantum number M to cause a transition by +1 so that the spin array P of conductive electrons may be represented by P=0.5 due to respective transition probability 3:1. After turning off the laser beams 27, P is attenuated by the recoupling process and the spin relieving process. When the spin-lattice relieving time is much longer than the recoupling time, the intensity of magnetization at constant state will be M2=1/2g*betanP, where n=n++n-, g* is g factor of conductive electron, beta is Bohr magnetron. Through these procedures, the electron pair creation in the semiconductor is prevented due to the spin array by light irradiation so that the intensity of weak coupling may be reduced to enable the weak coupling to be controlled by irradiation with light of circular polarization.
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