摘要 |
PURPOSE:To shorten the time required for temp. calibration and to improve accuracy by using plural photodetecting elements to simultaneously measure the temps. of a standard sample and material to be measured. CONSTITUTION:An IR radiation thermometer 1 arrayed with the two PbS photodetecting elements 2 on a focal plane is formed. The standard sample consisting of a silicon wafer 4 deposited with aluminum by evaporation and the material which is to be measured and consists of a p-type GaAs wafer 3 are disposed at the same distance from the IR radiation thermometer 1 and are so disposed that the photodetecting elements 2 are located in the positions where the respective images of the standard sample and the material to be measured are formed. |