发明名称 PLASMA CVD DEVICE
摘要 PURPOSE:To prevent the peeling of a film by elevating a temperature, and to reduce the generation of dust by adjacently mounting a heating element heating the other electrode body facing one electrode body on the rear side to a body, to which a film is formed, in the other electrode body. CONSTITUTION:A glass substrate 7, a substrate holder 48 and one electrode body 49 on a cart 45 are heated previously, and carried into a treating chamber 21, the glass substrate 7 is opposed face-to-face to the other electrode body 38, and both ends of the treating chamber 21 are closed and the inside of the treating chamber is kept in an airtight manner. An external heater 25 and a heater 41 are kept hot at all times. The inside of the treating chamber is kept airtight, air is exhausted from an exhaust opening 23 and the inside of the treating chamber is brought to a vacuum state, and a film formation gas 28 such as silane, nitrogen, hydrogen is fed from a supply pipe body 29. The gas is ejected from exhaust nozzles 30..., diffused through a diffusion plate 34 and the diffusion electrode body 38, and brought into contact uniformly with the surface of the glass substrate 7 as a body 8 to which a film is shaped. AC voltage is applied between one electrode body 49 and the other electrode body 38 at the same time. Accordingly, plasma discharge is generated, and the film difficult to be peeled and consisting of amorphous silicon, etc., is formed onto the surface of the glass substrate 7.
申请公布号 JPS63265423(A) 申请公布日期 1988.11.01
申请号 JP19870098642 申请日期 1987.04.23
申请人 TOSHIBA CORP 发明人 MURAKAMI NOBUAKI
分类号 H01L21/31;H01L21/205;H01L31/04 主分类号 H01L21/31
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