发明名称 METHOD FOR SELECTIVELY GROWING CRYSTAL
摘要 PURPOSE:To form crystal having good heat release properties and easy application to a device by selectively forming an inorganic nonoxidative compd. good in insulating properties and heat conductivity on a nucleus nonformation face. CONSTITUTION:A nucleus nonformation face 1 which consists of an inorganic nonoxidative compd. (e.g. BN) having heat conductivity and insulating properties and is small in nucleus formation density is prepared. A nucleus formation face 3 having small area sufficient to grow crystal of only single nucleus and having nucleus formation density larger than the nucleus formation density of the face 1 is formed thereon. Then single crystal 4 consisting of the single nucleus is grown by performing crystal formation treatment to the faces 1, 3.
申请公布号 JPS63239190(A) 申请公布日期 1988.10.05
申请号 JP19870073526 申请日期 1987.03.27
申请人 CANON INC 发明人 OMI KAZUAKI
分类号 C30B25/00;C30B25/18;C30B29/06;H01L21/205 主分类号 C30B25/00
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