| 摘要 |
PURPOSE:To facilitate treatment performed at a uniform rate, by providing a magnetic generating means having a rotating means on the rear face of an opposed electrode such that the magnetic generating means has larger magnetic force in its peripheral region than in the center of rotation thereof, so that difference in effect of magnetic field due to moved distance in the peripheral region can be corrected by an auxiliary magnetic generating means provided on the same rotating axis. CONSTITUTION:Reaction gas is supplied to a plasma treatment apparatus and electric power is supplied to a substrate electrode 2 by a high-frequency power supply 4 with a certain level of pressure maintained in the apparatus. The reaction gas produces plasma between the substrate electrode 2 and an electrode 1 opposed thereto, whereby an etching material formed on a wafer 10 is sputtered by the plasma or removed by chemical reaction and the etching operation is proceeded. A permanent magnet 5 is located on the wafer 10 such that the rotation center 5a of the permanent magnet 5 is positioned on the center of the wafer. The permanent magnet 5 is rotated during the etching operation whereby high-density plasma produced by plasma discharge is caused to scan all over the wafer 10. Permanent magnets having larger magnetic power may be provided instead of the parts of the permanent magnet corresponding to 60 mm from the opposite ends along the longer side thereof, so that increased etching rate can be realized at the peripheral region of the wafer and, therefore, the uniformity in etching is improved remarkably.
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