发明名称 MAGNETRON SPUTTERING DEVICE
摘要 PURPOSE:To uniformly consume the material of a target over a wide area and to form a thin film of a uniform thickness by forming an orthogonal electromagnetic field for generating high density plasma on the rear side of the target with a line of magnetic force directed from a circumferential part of the target to other circumferential part. CONSTITUTION:When sputtered particles are deposited on a substrate 2 near the anode 1 confronting a target 4 on the cathode 5, an orthogonal electromagnetic field is formed with magnets 6, 7 so arranged at circumferential parts of the rear side of the target 4 that a line 3 of magnetic force is directed from a circumferential part of the target 4 to other circumferential part. By the electromagnetic field, a high density plasma region in which sputtering can be caused is formed and the constituent atoms. of the material of the target 4 are sputtered over most of the whole area of the target 4. The magnets 6, 7 are preferably set in a holder 8 and rotated around the center of the target 4 by a rotating mechanism 9. The efficiency of utilization of the target material and the uniformity of the thickness distribution of a formed film can be improved.
申请公布号 JPS63227778(A) 申请公布日期 1988.09.22
申请号 JP19870061525 申请日期 1987.03.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJII SHINJI
分类号 C23C14/36 主分类号 C23C14/36
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