| 摘要 |
PURPOSE:To produce, with good reproducibility, a mask, for photoelectronic replication use, displaying various photoelectric characteristics by a method wherein an alkali metal film or an alkaline-earth metal film is applied to the surface of a semiconductor substrate containing Sb. CONSTITUTION:A mask is used after an alkali metal film 10 or an alkaline-earth metal film has been applied partially to the surface of a semiconductor substrate 6 containing Sb. In addition, after a protective film 7 has been formed on the semiconductor substrate 6 and has been patterned, Sb is doped into the semiconductor substrate 6 by making use of the protective film 7 as a mask. Then, after the alkali metal film 10 or the alkaline-earth metal film has been applied to the whole surface, a photoelectric film 11 composed of an Sb-alkali metal or an Sb-alkaline-earth metal is formed so as to obtain a mask for photoelectronic replication use. By this setup, if the amount of Sb to be doped into the semiconductor substrate is adjusted, it is possible to appropriately manufacture the mask, for photoelectronic replication use, with the prescribed photoelectric characteristics. |
