发明名称 Ion beam apparatus
摘要 A thin film manufacturing and processing apparatus by using an ion beam comprises a plasma producing vessel for producing therein a plasma by ionizing a neutral gas, an electrode assembly for extracting ions in the form of an ion beam from the plasma, a vacuum container accomodating therein a target to be worked through irradiation of the ion beam, and permanent magnets disposed on the outer periphery of the plasma generating vessel which is formed of a nonmagnetic material and serves as an anode electrode. An ion beam of high uniformity and a large diameter can be obtained to allow manufacture and processing of large scale magnetic thin films and semiconductors with high precision.
申请公布号 US4767931(A) 申请公布日期 1988.08.30
申请号 US19860942711 申请日期 1986.12.17
申请人 HITACHI, LTD. 发明人 SATO, TADASHI;KUROSAWA, TOMOE;FUJIWARA, SHIGETAKA;HIGAKI, MASARU
分类号 H01J37/32;(IPC1-7):H01J7/24 主分类号 H01J37/32
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