发明名称 |
Ion beam apparatus |
摘要 |
A thin film manufacturing and processing apparatus by using an ion beam comprises a plasma producing vessel for producing therein a plasma by ionizing a neutral gas, an electrode assembly for extracting ions in the form of an ion beam from the plasma, a vacuum container accomodating therein a target to be worked through irradiation of the ion beam, and permanent magnets disposed on the outer periphery of the plasma generating vessel which is formed of a nonmagnetic material and serves as an anode electrode. An ion beam of high uniformity and a large diameter can be obtained to allow manufacture and processing of large scale magnetic thin films and semiconductors with high precision.
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申请公布号 |
US4767931(A) |
申请公布日期 |
1988.08.30 |
申请号 |
US19860942711 |
申请日期 |
1986.12.17 |
申请人 |
HITACHI, LTD. |
发明人 |
SATO, TADASHI;KUROSAWA, TOMOE;FUJIWARA, SHIGETAKA;HIGAKI, MASARU |
分类号 |
H01J37/32;(IPC1-7):H01J7/24 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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