| 摘要 |
PURPOSE:To obtain a wafer supporter, which can arrange superposed wafers so that the mutual adhesive properties of the wafers are improved when the superposed wafers are taken into or out of a furnace, by constituting the wafer supporter of a first means, in which a spot facing capable of housing the wafers is formed, and a second means capable of covering the spot facing. CONSTITUTION:Wafers 4, 5 are superposed through a PSG film, a BPSG film, an impurity-added SOG film, etc., and heat treated with the object of the joining of a plurality of the wafers 4, 5. A wafer supporter at a time when the wafers 4, 5 are inserted to a high temperature furnace is organized of a first means 1, in which spot facings 2 capable of housing the wafers 4, 5 are shaped, and a second means 3 capable of covering on the first means 1 in the manufacturing process of such a semiconductor device. A bottom quartz board 1 as the first means in which the spot facings 2 in depth approximately equal to or slightly shallower than thickness, in which two wafers 4, 5 to be laminated are superposed, are shaped and a quartz board 3 as the second means for covering on the bottom quartz board 1 are provided. Accordingly, the positional displacement of the wafers is inhibited by weight, and excellent adhesive properties are acquired. |
