发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To increase the difference in solubility between an exposed part and unexposed part by using a two-layered resist consisting of a mixed layer contg. an alkali-soluble high-polymer compd. and azide compd. and radiation sensitive compsn. layer contg. a diazonium salt. CONSTITUTION:A pattern is formed on a substrate 3 by the resist process using the two-layered resist consisting of the mixed layer 2 contg. the alkali-soluble high-polymer compd. (A) and the azide compd. (B) and the radiation sensitive compsn. layer 1 contg. the diazonium salt. An alkali-soluble phenolic resin such as polyvinyl phenol is preferable as the component (A) and an arom. azide compd. is usable for the component B. Since the surface layer in the exposed part of the layer 2 is insolubilized according to this constitution, the pattern of high contrast is obtd. Since the inside of the layer 2 is insolubilized by exposure as well, side etching is prevented at the time of development and the fine pattern having high resolution is formed.
申请公布号 JPS63193139(A) 申请公布日期 1988.08.10
申请号 JP19870024536 申请日期 1987.02.06
申请人 HITACHI LTD 发明人 UCHINO MASAICHI;IWAYAGI TAKAO;UENO TAKUMI;HASHIMOTO MICHIAKI;NONOGAKI SABURO
分类号 G03F7/095 主分类号 G03F7/095
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