VAPOR GROWTH SYSTEM FOR GALLIUM NITRIDE COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To obtain a gallium nitride compound semiconductor thin film of high quality by a method wherein a dopant gas and another reaction gas are separated by using a first reaction-gas pipe and a second reaction-gas pipe and these gases are mixed for the first time inside a reaction chamber near a substrate. CONSTITUTION:A mixed gas composed of a group of NH3 and trimethylgallium and another group of trimethylaluminum and H2 flows into a reaction chamber 20 through an opening 25a of a first reaction-gas pipe 25; another mixed gas composed of diethylzinc DEZ and H2 flows into the reaction chamber 20 through an opening 26a of a second reaction-gas pipe 26. When an I-type AlXGa1-xN thin film is to be formed, DEZ as a dopant gas is mixed with a reaction gas introduced through the first reaction-gas pipe 25 for the first time inside a reaction chamber 20a near a sapphire substrate 24. The DEZ is blown toward the sapphire substrate 24 and is thermally decomposed; an element to be doped is doped into AlXGa1-xN to be grown; the I-type AlXGa1-xN can be obtained. By this setup, it is possible to grow the I-type AlXGa1-xN thin film of high quality.