| 摘要 |
PURPOSE:To contrive to improve the accuracy of a matching key by a method wherein an insulator pattern in form of having a clearance parallel with the direction of the sliding of growing solution or a substrate is provided on the substrate for liquid phase growth, thus the pattern decided as the matching key for growth. CONSTITUTION:A pair of recessed patterns of SiO2 films 14 are formed in parallel with the direction of the sliding 15 of the substrate 1 or the solution for liquid phase growth on the substrate, and the clearance 16 is provided. The wipe-off of the solution is improved by this clearance, melt remnant 17 further reduces, and the SiO2 pattern can be detected with good accuracy in the surface of the substrate 1 and that of the grown layer. |
