发明名称 CHARGED CARRIER MULTIPLIER USING AVALANCHE PHENOMENON AND APPLICATION OF THE MULTIPLIER TO PHOTOSENSOR, PHOTOELECTRIC CATHODE AND INFRARED IMAGE DEVICE
摘要 <p>Charge carrier multiplication device (CCMD) of a type operating by an avalanche phenomenon which comprises:… - a semiconducting material (1) of homogeneous composition, placed in an electric field (@f);… - plane and parallel layers (2-i) made in this material (1), perpendicular to the operational field (@f), which are thin in relation to the thickness of the material separating them and are n or p doped according to the said type of charge carrier. These layers form storage regions where charge carriers of the said type are confined. …<??>The injection of at least one charge carrier (3) of the said type into the CCMD triggers the multiplication phenomenon by an ionising collision process; this charge carrier (3) is accelerated by the operational field (@f) and thus acquires an energy sufficient for being able to eject a charge carrier (4-2) of the said type from the doped layer (2-1); the charge carriers (4-1) and (4-2) obtained are guided by the operational field (@f). This ionising collision mechanism is reproduced progressively in the doped layers (2-i) and thus forms an avalanche multiplication phenomenon. …<??>Application of this device to photodetectors, to photocathodes and to infrared imagers. …<IMAGE>… </p>
申请公布号 JPS63164372(A) 申请公布日期 1988.07.07
申请号 JP19870315085 申请日期 1987.12.12
申请人 THOMSON CSF 发明人 ARUMAN TARUDETSURA;TEIERI BUEIRU;BORUJIYU BUANTE
分类号 H01L31/0264;H01J1/30;H01J1/308;H01J1/34;H01L27/14;H01L27/146;H01L29/86;H01L31/0352;H01L31/09;H01L31/107;H01L31/111;H01L31/153 主分类号 H01L31/0264
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