发明名称 |
CHARGED CARRIER MULTIPLIER USING AVALANCHE PHENOMENON AND APPLICATION OF THE MULTIPLIER TO PHOTOSENSOR, PHOTOELECTRIC CATHODE AND INFRARED IMAGE DEVICE |
摘要 |
<p>Charge carrier multiplication device (CCMD) of a type operating by an avalanche phenomenon which comprises:… - a semiconducting material (1) of homogeneous composition, placed in an electric field (@f);… - plane and parallel layers (2-i) made in this material (1), perpendicular to the operational field (@f), which are thin in relation to the thickness of the material separating them and are n or p doped according to the said type of charge carrier. These layers form storage regions where charge carriers of the said type are confined. …<??>The injection of at least one charge carrier (3) of the said type into the CCMD triggers the multiplication phenomenon by an ionising collision process; this charge carrier (3) is accelerated by the operational field (@f) and thus acquires an energy sufficient for being able to eject a charge carrier (4-2) of the said type from the doped layer (2-1); the charge carriers (4-1) and (4-2) obtained are guided by the operational field (@f). This ionising collision mechanism is reproduced progressively in the doped layers (2-i) and thus forms an avalanche multiplication phenomenon. …<??>Application of this device to photodetectors, to photocathodes and to infrared imagers. …<IMAGE>… </p> |
申请公布号 |
JPS63164372(A) |
申请公布日期 |
1988.07.07 |
申请号 |
JP19870315085 |
申请日期 |
1987.12.12 |
申请人 |
THOMSON CSF |
发明人 |
ARUMAN TARUDETSURA;TEIERI BUEIRU;BORUJIYU BUANTE |
分类号 |
H01L31/0264;H01J1/30;H01J1/308;H01J1/34;H01L27/14;H01L27/146;H01L29/86;H01L31/0352;H01L31/09;H01L31/107;H01L31/111;H01L31/153 |
主分类号 |
H01L31/0264 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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