发明名称 |
CMOS INTEGRATED CIRCUIT TECHNOLOGY |
摘要 |
<p>To minimize the number of independent masking operations in the manufacture of a CMOS integrated circuit device using twin tub technology, the n-tub is made by separate phosphorus and arsenic implants through a common mask, and the p-tub is made by two separate boron implants through a common mask, complementary to that used for forming the n-tub. One of the boron implants occurs before, the other after, the drive-in heating step. After tub formation, further movement of the implanted ions is kept small by use of a high pressure process for growing the field oxide and by only limited further heating. Transistors are then formed in the tubs.</p> |
申请公布号 |
EP0179810(B1) |
申请公布日期 |
1988.06.08 |
申请号 |
EP19850901829 |
申请日期 |
1985.03.26 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
HILLENIUS, STEVEN, JAMES;PARRILLO, LOUIS, CARL |
分类号 |
H01L21/76;H01L21/265;H01L21/266;H01L21/762;H01L21/8234;H01L21/8238;H01L27/08;H01L27/088;H01L27/092;H01L29/78;(IPC1-7):H01L21/82;H01L29/62 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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