| 摘要 |
PURPOSE:To improve the reliability of wirings due to electromigration resistance with good step coverage of a wiring metal layer by composing at least one layer of a plurality of metallic layers of a metallic layer formed by an organic metal vapor chemical growth method. CONSTITUTION:A polycrystalline silicon electrode 13 is formed through an oxide film 12 on a semiconductor substrate 10, and a metallic wiring layer 19 made of a laminated structure of a titanium nitride (TiN) film 16, an aluminum film 17 fored by an MOCVD method, and a titanium (Ti) film 18 is formed through a phosphorus glass (PSG) film 14 on the electrode 13. Thus, at least one layer 17 of the layers 19 is formed by the MOCVD method to improve the step coverage of the layer 19. Since the thickness of the metallic layer at the step is not thinned as compared with the flat part, the electromigration resistance of the layer 19 is largely improved to improve the reliability of the wirings.
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