| 摘要 |
PURPOSE:To prevent abnormal etching in formation of a via hole and to prevent disconnection in a metal layer formed on the surface of the via hole, by previously forming a first metal layer selectively within a contact hole provided in an etch stopping insulation layer. CONSTITUTION:An etch stopping insulation layer 2 having a window hole 2a is formed on the surface of a GaAs substrate 1, and a first metal layer 4 is formed in the window hole 2a. Then, a second metal layer 5 for providing interconnections, electrodes etc of an electric circuit is formed thereon. The substrate 1 is wet etched from the rear face thereof so that a via hole 1a is formed and the first metal layer 4 is exposed. The exposed surface of the first metal layer 4 as well as the surface of the via hole 1a are totally covered with a plated metal layer 6 for supplying power, which is then covered with a third metal layer 66. In this manner, abnormal etching or overhang within the via hole can be prevented effectively. Accordingly, disconnection in the metal layer 6 on the surface of the via hole can be prevented.
|
