| 摘要 |
PURPOSE:To improve the effect of current stricture layers, by forming a double- stripe state in the upper surface of a substrate, providing a minority-carrier preventing layer in a region corresponding to the lower stage of the double- stripe state, and increasing the thickness of layers constituting the current stricture layers. CONSTITUTION:The upper surface of a substrate 1 of a semiconductor laser having current narrowing layers 6 and 7 is made to be double stripes 15. A minority carrier preventing layer 21 is provided in a region corresponding to the lower stage of the double stripes 15. The thickness of the layers constituting the current narrowing layers is made thick. Since the upper surface of the substrate is made to be the double stripes, a special selective growing method is not required for increasing the thickness of any of the layers constituting the current stricture layers. Thus the effect of the current stricture layers is improved. |
