发明名称 |
Method of making a self-aligned bipolar transistor with composite masking |
摘要 |
A fully self-aligned polycrystalline silicon emitter bipolar transistor. Self-alignment of the p+ base contact (12) is achieved by using oxidized sidewalls (8) (sidewall spacers) of the emitter mesa (7) as part of the p+ base contact implantation mask. Collector contact (13) alignment can be achieved using oxidized sidewalls (17) of polycrystalline silicon alignment mesas (14) defined in the same polysilicon as the emitter mesa (7) but deposited on oxide (2) rather than the implanted base region (5).
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申请公布号 |
US4745080(A) |
申请公布日期 |
1988.05.17 |
申请号 |
US19860831257 |
申请日期 |
1986.02.20 |
申请人 |
STC, PLC |
发明人 |
SCOVELL, PETER D.;BLOMLEY, PETER F.;BAKER, ROGER L.;TOMKINS, GARY J. |
分类号 |
H01L29/73;H01L21/033;H01L21/331;(IPC1-7):B01J17/00;H01L21/26;H01L21/225 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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