| 摘要 |
PURPOSE:To obtain an element with etching-controllability and less scattering in its element characteristics and its life, by forming an InGaAsP layer on a InP substrate before forming an InP block layer for current narrowing on the InP substrate, and by forming the InP block layer so as to interpose this InGaAsP layer. CONSTITUTION:A p-type InGaAsP layer 22 and a n-type InP block layer 23 are serially formed on the first surface of a p-type InP substrate 21. An opening part 25 for current conduction is formed on a resist 24 coating the InP block layer 23. While etching is performed by using the resist 24 as a mask, a p-type InP clad layer 27, a p-type InGaAsP active layer 28, a n type InP clad layer 29, and a n-type InGaAsP layer 30 are formed serially on the InP block layer 23. Thereafter, a resist pattern 31 is formed on the second surface of the InP substrate 21 and a AuZn evaporative film 32 is formed as a P-side electrode all over the second surface. A window 33 for light drawing is formed in the AuZn evaporative film by a liftoff method, and an AuGeNi evaporative film 34 is formed on the surface of the n-type InGaAsP layer 30. |
