| 摘要 |
PURPOSE:To simplify and stabilize the flattening process of a wiring region by forming a first layer electrode by a high melting-point metal or the silicide of the metal, shaping a BPSG film onto the first layer electrode and executing heat treatment. CONSTITUTION:A P-type impurity diffusion region 28 as a base region is formed in a surface region in an N-type semiconductor substrate 27 as a collector region, and an N-type impurity diffusion region 29 as an emitter region is shaped in a surface region in the region 28. A metallic layer consisting of a high melting-point metal is formed onto the whole surface on a semiconductor substrate 11, and first layer electrodes 30, 31 are shaped through patterning. A BPSG film 32 is grown and formed on the whole surface on the bubstrate 11, and the amorphous high melting-point metallic layers 30, 31 are recrystallized through heat treatment while the BPSG film 2 is melted. Accordingly, the BPSG film 32 is flattened. Contact holes 33, 34 are bored to the BPSG film 32 on the first layer electrodes 30, 31. |
