发明名称 PLASMA CHEMICAL VAPOR GROWTH EQUIPMENT
摘要 PURPOSE:To enable reducing the generation of minute powder when an X-ray membrane is formed by plasma CVD by coating a susceptor and an electrode made of a metal with alumina. CONSTITUTION:Plasma chemical vapor growth equipment appropriate tor forming a thin film of amorphous boron hydride : nitride or boron hydride : nitride carbide is made by coating a susceptor 2 and an electrode 1 made of a metal with alumina 5. Por example, the aluminum susceptor 2 is made facing the aluminum electrode 1, a raw material gas is supplied to the electrode 1, the gas is made plasma in the electrode 1 by applying high-frequency voltage and is discharged toward the susceptor 2, an alumina sintering plate is stuck to the electrode 1 and the susceptor 2 and the external surfaces are coated. A silicon water 3 is mounted on the susceptor 2, heated by a heater 4, a mixed gas of diborane, ammonia and methane diluted with argon is introduced and an amorphous boron hydride : nitride carbide thin film is formed on a silicon wafer 3 by applying high-frequency voltage.
申请公布号 JPS6376430(A) 申请公布日期 1988.04.06
申请号 JP19860219794 申请日期 1986.09.19
申请人 FUJITSU LTD 发明人 YAMADA MASAO;NAKAISHI MASAFUMI
分类号 B01J19/08;H01L21/027;H01L21/30 主分类号 B01J19/08
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